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SIHG47N60AE-GE3

Name: SIHG47N60AE-GE3
Brand: Vishay
SKU: 712153
Availability: InStock
Rating: 4.84 (48 reviews)

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Part No	SIHG47N60AE-GE3
Manufacturer	Vishay
Catalog	FETs - Single
Description	MOSFET N-CH 600V 43A TO247AC
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay Siliconix
Packaging	Tube
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	600V
Id - Continuous Drain Current	43A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	65mOhm at 24A, 10V
Gate Source Voltage(th) (Maximum) at Id	4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	182nC at 10V
Gate Source Voltage (Maximum)	±30V
Input Capacitance (Ciss) (Maximum) at Vds	3600pF at 100V
Power Dissipation (Maximum)	313W
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	Through Hole
Supplier Device Package	TO-247AC
Manufacturer Package	TO-247-3
Manufacturer Pack Quantity	500
MSL Level	1 (Unlimited)
Win Source Part Number	712153-SIHG47N60AE-GE3
Popularity	Low
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian SIHG47N60AE-GE3 CAD Model

Alternative Products

Description

The Vishay Siliconix SIHG47N60AE-GE3 is a N-Channel MOSFET transistor, manufactured by Vishay Siliconix.

Supplier Device Package: TO-247AC
Drain-Source Breakdown Voltage (maximum): 600V
Continuous Drain Current: 43A
Drive Voltage: 10V
Power Dissipation (maximum): 313W
Gate Charge (Qg) (maximum) @ Vgs: 182nC @ 10V

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
12+	$5.0427	$60.5124
28+	$4.1384	$115.8752
44+	$4.0090	$176.3960
60+	$3.8796	$232.7760
77+	$3.7503	$288.7731
104+	$3.3622	$349.6688

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 5,400 pieces

MOQ: 12 pcs

Order Increment : 1 pcs

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Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
Supplier Lead-Time	Call for availability
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SIHG47N60AE-GE3

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