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SI7101DN-T1-GE3

Part No SI7101DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 35A PPAK 1212-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Series TrenchFET
Packaging Reel - TR
Channel Type Type P
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 102nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 3595pF @ 15V
Vgs (Maximum) ±25V
Power Dissipation (Maximum) 3.7W (Ta), 52W (Tc)
Rds On (Maximum) @ Id, Vgs 7.2 mOhm @ 15A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PowerPAK 1212-8
Package PowerPAK 1212-8
Manufacturer Homepage www.vishay.com
Win Source Part Number 712145-SI7101DN-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Family Name Si7101DN
Introduction Date April 21, 2013
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian SI7101DN-T1-GE3 CAD Model

Description

The Si7101DN is a P-channel MOSFET designed for use in a wide range of applications manufactured by Vishay.

  • Maximum Continuous Drain Current: 35A @ 25°C
  • Maximum Rds On: 7.2 mOhm @ 15A and 10V
  • Gate Threshold Voltage: 2.5V @ 250μA
  • Gate Charge: 102nC @ 10V
  • Input Capacitance: 3595pF @ 15V
  • Maximum Power Dissipation: 3.7W (Ta), 52W (Tc)
  • Package: PowerPAK 1212-8

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.5918 $50.3030
210+ $0.4856 $101.9760
320+ $0.4704 $150.5280
440+ $0.4553 $200.3320
570+ $0.4401 $250.8570
765+ $0.3946 $301.8690
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,647 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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