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Same model may have multiple batches, images only for reference.
SI5445BDC-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI5445BDC-T1-GE3

Part No SI5445BDC-T1-GE3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET P-CH 8V 5.2A 1206-8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tape and Reel
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 8V
Id - Continuous Drain Current 5.2A
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Maximum) at Id, Vgs 33mOhm at 5.2A, 4.5V
Gate Source Voltage(th) (Maximum) at Id 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 21nC at 4.5V
Gate Source Voltage (Maximum) ±8V
Power Dissipation (Maximum) 1.3W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 1206-8 ChipFET
Manufacturer Package 8-SMD, Flat Lead
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Win Source Part Number 716201-SI5445BDC-T1-GE3
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI5445BDC-T1-GE3 CAD Model

Description

This electronic component is a MOSFET manufactured by Vishay Siliconix.

  • Supply and Demand Status: Limited
  • Popularity: Low
  • Status: Obsolete
  • Supplier Device Package: 1206-8 ChipFET
  • Temperature Range: -55°C to 150°C
  • Maximum Power Dissipation: 1.3W

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