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Same model may have multiple batches, images only for reference.
SI4941EDY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4941EDY-T1-E3

Part No SI4941EDY-T1-E3
Manufacturer Vishay
Catalog FETs - Arrays
Description MOSFET 2P-CH 30V 10A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Reel
Status Obsolete
Transistor Polarity 2 P-Channel (Dual)
FET Feature Logic Level Gate
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 10A
Rds On (Maximum) at Id, Vgs 21mOhm at 8.3A, 10V
Gate Source Voltage(th) (Maximum) at Id 2.8V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 70nC at 10V
Maximum Power 3.6W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 8-SOIC
Supplier Device Package 8-SO
Family Part Number SI4941
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 720340-SI4941EDY-T1-E3
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4941EDY-T1-E3 CAD Model

Description

The Vishay Siliconix transistor is a dual P-channel transistor.

  • Type: Dual P-Channel Transistor
  • Mounting: SMD
  • Package: Reel
  • Maximum Power: 3.6W
  • Vds - Drain-Source Breakdown Voltage: 30V
  • Id - Continuous Drain Current: 10A
  • Rds On (Maximum) @ Id, Vgs: 21mOhm @ 8.3A, 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 2.8V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: -
  • Manufacturer Package: 8-SOIC
  • Operating Temperature Range: -55°C to 150°C

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