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Same model may have multiple batches, images only for reference.
SI2343DS-T1 Real Image
Same model may have multiple batches, images only for reference.

SI2343DS-T1

Part No SI2343DS-T1
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET P-CH 30V 3.1A SOT23
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tape and Reel
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 3.1A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 53mOhm at 4A, 10V
Gate Source Voltage(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 21nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 540pF at 15V
Power Dissipation (Maximum) 750mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package SOT-23-3 (TO-236)
Manufacturer Package TO-236-3, SC-59, SOT-23-3
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Win Source Part Number 716182-SI2343DS-T1
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI2343DS-T1 CAD Model

Description

The Vishay Siliconix SI2343DS-T1 is a P-channel MOSFET transistor designed for use in a wide range of electronic devices.

  • Supply and Demand: balanced
  • Vds - Drain-Source Breakdown Voltage: 30V
  • Id - Continuous Drain Current: 3.1A
  • Rds On (Maximum) @ Id, Vgs: 53mOhm @ 4A, 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 3V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 540pF @ 15V

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