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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 4.3A
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Rds On (Maximum) at Id, Vgs 540mOhm at 2.6A, 5V
Gate Source Voltage(th) (Maximum) at Id 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 6.1nC at 5V
Gate Source Voltage (Maximum) ±10V
Input Capacitance (Ciss) (Maximum) at Vds 250pF at 25V
Power Dissipation (Maximum) 2.5W, 25W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-251AA
Manufacturer Package TO-251-3 Short Leads, IPak, TO-251AA
Manufacturer Pack Quantity 75
MSL Level 1 (Unlimited)
Win Source Part Number 1188660-IRLU110
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLU110 CAD Model

Description

The IRLU110 is an N-Channel MOSFET transistor from Vishay Siliconix.

  • Product Name: IRLU110
  • Manufacturer: Vishay Siliconix
  • Channel Type: N-Channel MOSFET
  • Drain-Source Breakdown Voltage (Max): 100V
  • Continuous Drain Current: 4.3A
  • On-Resistance (Max): 540mOhm @ 2.6A and 5V
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Gate-Source Voltage: ±10V
  • Input Capacitance: 250pF @ 25V
  • Gate Charge: 6.1nC @ 5V

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