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IRLD120PBF Real Image

Same model may have multiple batches, images only for reference.

IRLD120PBF Real Image

Same model may have multiple batches, images only for reference.

IRLD120PBF

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	IRLD120PBF
Manufacturer	Vishay
Catalog	FETs - Single
Description	HEXFET Power MOSFET \| MOSFET N-CH 100V 1.3A 4-DIP
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay Siliconix
Packaging	Tube
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	100V
Id - Continuous Drain Current	1.3A
Drive Voltage (Max Rds On, Min Rds On)	4V, 5V
Rds On (Maximum) at Id, Vgs	270mOhm at 780mA, 5V
Gate Source Voltage(th) (Maximum) at Id	2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	12nC at 5V
Gate Source Voltage (Maximum)	±10V
Input Capacitance (Ciss) (Maximum) at Vds	490pF at 25V
Power Dissipation (Maximum)	1.3W
Temperature Range - Operating	-55°C ~ 175°C
Mounting Style	Through Hole
Supplier Device Package	4-DIP, Hexdip, HVMDIP
Manufacturer Package	4-DIP
Manufacturer Pack Quantity	100
MSL Level	1 (Unlimited)
Win Source Part Number	1188533-IRLD120PBF
Manufacturer Homepage	www.irf.com
Popularity	Medium
Supply and Demand Status	Balance
Application Field	Used in Industrial, Power Management
Ultra Librarian 3D Model	Ultra Librarian IRLD120PBF CAD Model

Alternative Products

Description

The Vishay Siliconix IRLD120PBF is an N-channel MOSFET transistor manufactured by Vishay Siliconix.

Type: Through-hole MOSFET
Application: Industrial and Power Management
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current: 1.3A
Maximum Rds On: 270mOhm @ 780mA and 5V
Gate-Source Voltage(th): 2V @ 250μA
Gate Charge (Qg): 12nC @ 5V
Package: 4-DIP, Hexdip, HVMDIP

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
18+	$2.9324	$52.7832
42+	$2.4061	$101.0562
65+	$2.3309	$151.5085
89+	$2.2557	$200.7573
115+	$2.1805	$250.7575
154+	$1.9549	$301.0546

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