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Same model may have multiple batches, images only for reference.
IRLD120PBF Real Image
Same model may have multiple batches, images only for reference.

IRLD120PBF

Part No IRLD120PBF
Manufacturer Vishay
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 100V 1.3A 4-DIP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 1.3A
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Rds On (Maximum) at Id, Vgs 270mOhm at 780mA, 5V
Gate Source Voltage(th) (Maximum) at Id 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 12nC at 5V
Gate Source Voltage (Maximum) ±10V
Input Capacitance (Ciss) (Maximum) at Vds 490pF at 25V
Power Dissipation (Maximum) 1.3W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Manufacturer Package 4-DIP
Manufacturer Pack Quantity 100
MSL Level 1 (Unlimited)
Win Source Part Number 1188533-IRLD120PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian IRLD120PBF CAD Model

Description

The Vishay Siliconix IRLD120PBF is an N-channel MOSFET transistor manufactured by Vishay Siliconix.

  • Type: Through-hole MOSFET
  • Application: Industrial and Power Management
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 1.3A
  • Maximum Rds On: 270mOhm @ 780mA and 5V
  • Gate-Source Voltage(th): 2V @ 250μA
  • Gate Charge (Qg): 12nC @ 5V
  • Package: 4-DIP, Hexdip, HVMDIP

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