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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 5.2A
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Rds On (Maximum) at Id, Vgs 800mOhm at 3.1A, 5V
Gate Source Voltage(th) (Maximum) at Id 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 16nC at 5V
Gate Source Voltage (Maximum) ±10V
Input Capacitance (Ciss) (Maximum) at Vds 360pF at 25V
Power Dissipation (Maximum) 50W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1188517-IRL620
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian IRL620 CAD Model

Description

The Vishay Siliconix IRL620 is a MOSFET that belongs to the N-Channel FET type.

  • Category: discrete semiconductor product
  • Applications: industrial and power management
  • Status: obsolete
  • Supply and Demand Status: limited
  • Manufacturer Package: TO-220-3
  • Drive Voltage: 4V, 5V
  • Drain-Source Breakdown Voltage: 200V
  • Power Dissipation: 50W
  • Gate source voltage(th) (Maximum) @ Id: 2V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 16nC @ 5V

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