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Same model may have multiple batches, images only for reference.
IRF720STRR Real Image
Same model may have multiple batches, images only for reference.

IRF720STRR

Part No IRF720STRR
Manufacturer Vishay
Catalog FETs - Single
Description HEXFET POWER MOSFET | MOSFET N-CH 400V 3.3A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tape and Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 400V
Id - Continuous Drain Current 3.3A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.8Ohm at 2A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 20nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 410pF at 25V
Power Dissipation (Maximum) 3.1W, 50W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 800
MSL Level 1 (Unlimited)
Win Source Part Number 1187178-IRF720STRR
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF720STRR CAD Model

Description

The Vishay Siliconix MOSFET is a power transistor designed for use in various electronic applications.

  • Transistor Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 400V
  • Maximum Continuous Drain Current: 3.3A
  • Maximum Rds On: 1.8Ohm @ 2A and 10V
  • Gate Source Voltage (th): 4V @ 250μA
  • Gate Charge (Qg): 20nC @ 10V
  • Input Capacitance (Ciss): 410pF @ 25V
  • Package: D2PAK and TO-263AB
  • Mounting: SMD
  • Power Dissipation: 3.1W and 50W maximum
  • Status: Obsolete
  • Supply and Demand Status: Balance
  • Manufacturer: Vishay Siliconix
  • Win Source Part Number: 1187178-IRF720STRR

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