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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 11A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 600mOhm at 6A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 140nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2700pF at 25V
Power Dissipation (Maximum) 180W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247-3
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 500
MSL Level 1 (Unlimited)
Win Source Part Number 1187815-IRFPC50
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian IRFPC50 CAD Model

Description

The Vishay IRFPC50 is an obsolete N-channel MOSFET used in industrial and power management applications.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 11A
  • Temperature Range: -55°C to 150°C
  • Maximum Power Dissipation: 180W
  • Gate-Source Voltage: ±20V
  • Package: TO-247-3
  • Supply and Demand Status: Limited
  • Gate-Source Voltage Threshold: 4V @ 250μA
  • Input Capacitance: 2700pF @ 25V

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.7657 $67.7826
42+ $3.0904 $129.7968
65+ $2.9934 $194.5710
90+ $2.8963 $260.6670
116+ $2.8007 $324.8812
155+ $2.5109 $389.1895
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 1,500 pieces
MOQ: 18 pcs
Order Increment : 1 piece
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