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IRF720

Part No IRF720
Manufacturer Vishay
Catalog FETs - Single
Description N-CHANNEL POWER MOSFETS | MOSFET N-CH 400V 3.3A TO-220AB
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 400V
Id - Continuous Drain Current 3.3A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.8Ohm at 2A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 20nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 410pF at 25V
Power Dissipation (Maximum) 50W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187170-IRF720
Manufacturer Homepage www.samsung.com/Products/Semiconductor
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF720 CAD Model

Description

The Vishay Siliconix IRF720 is an N-channel MOSFET transistor. IRF720 is from Vishay Siliconix.

  • Type: N-Channel MOSFET
  • Vds - Drain-Source Breakdown Voltage: 400V
  • Id - Continuous Drain Current: 3.3A
  • Power Dissipation (Maximum): 50W
  • Package: TO-220-3
  • Gate Source Voltage(th) (Maximum) @ Id: 4V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 410pF @ 25V
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
315+ $0.1848 $58.2120
760+ $0.1525 $115.9000
1,175+ $0.1478 $173.6650
1,615+ $0.1432 $231.2680
2,105+ $0.1374 $289.2270
2,805+ $0.1236 $346.6980
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,000 pieces
MOQ: 315 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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