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IRFPC60PBF

Part No IRFPC60PBF
Manufacturer Vishay
Catalog FETs - Single
Description HEXFET® Power MOSFET | MOSFET N-CH 600V 16A TO-247AC
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 16A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 400mOhm at 9.6A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 210nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 3900pF at 25V
Power Dissipation (Maximum) 280W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247-3
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 25
MSL Level 1 (Unlimited)
Win Source Part Number 1187821-IRFPC60PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian IRFPC60PBF CAD Model

Description

The Vishay Siliconix IRFPC60PBF is a N-Channel MOSFET transistor that is designed for use in industrial and power management applications.

  • Vds - Drain-Source Breakdown Voltage: 600V
  • Id - Continuous Drain Current: 16A
  • Rds On (Maximum) @ Id, Vgs: 400mOhm @ 9.6A, 10V
  • Gate Charge (Qg) (Maximum) @ Vgs: 210nC @ 10V
  • Packaging: TO-247-3
  • Power Dissipation (Maximum): 280W
  • Operating Temperature Range: -55°C to 150°C
  • Pack Quantity: 25
  • MSL Level: 1 (Unlimited)

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.0787 $53.0231
30+ $3.3467 $100.4010
47+ $3.2421 $152.3787
64+ $3.1375 $200.8000
83+ $3.0329 $251.7307
111+ $2.7192 $301.8312
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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