IRFP9240 Vishay
Same model may have multiple batches, images only for reference.

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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 12A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 500mOhm at 7.2A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 44nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1200pF at 25V
Power Dissipation (Maximum) 150W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247-3
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 500
MSL Level 1 (Unlimited)
Win Source Part Number 1187812-IRFP9240
Manufacturer Homepage www.samsung.com/Products/Semiconductor
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IRFP9240 CAD Model

Description

The MOSFET is a P-Channel transistor with a maximum power dissipation of 150W. It has a drive voltage of 10V and a Vds - Drain-Source Breakdown Voltage of 200V. Vishay Siliconix

  • Transistor Type: P-Channel
  • Maximum Power Dissipation: 150W
  • Drive Voltage: 10V
  • Drain-Source Breakdown Voltage: 200V
  • Package: TO-247-3
  • Gate Source Voltage (maximum): ±20V
  • Input Capacitance (Ciss) (maximum) @ Vds: 1200pF @ 25V
  • Supply and Demand: Limited
  • Status: Obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6299 $57.0465
85+ $1.3374 $113.6790
130+ $1.2956 $168.4280
180+ $1.2538 $225.6840
235+ $1.2120 $284.8200
310+ $1.0866 $336.8460
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 10,000 pieces
MOQ: 35 pcs
Order Increment : 1 piece
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