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Same model may have multiple batches, images only for reference.
IRFP360LC Real Image
Same model may have multiple batches, images only for reference.

IRFP360LC

Part No IRFP360LC
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET(Vdss=400V, Rds(on)=0.20ohm, Id=23A) | MOSFET N-CH 400V 23A TO-247AC
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 400V
Id - Continuous Drain Current 23A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 200mOhm at 14A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 110nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 3400pF at 25V
Power Dissipation (Maximum) 280W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247-3
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 500
MSL Level 1 (Unlimited)
Win Source Part Number 1187791-IRFP360LC
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management, Commercial
Ultra Librarian 3D Model Ultra Librarian IRFP360LC CAD Model

Description

The Vishay Siliconix IRFP360LC is a MOSFET transistor with N-channel polarity. Bold text The product is from Vishay Siliconix.

  • Applications: Industrial, power management, and commercial
  • Drain-Source Breakdown Voltage: 400V
  • Continuous Drain Current: 23A
  • Rds On (Maximum): 200mOhm @ 14A, 10V
  • Gate Source Voltage(th) (Maximum): 4V @ 250μA
  • Gate Charge (Qg) (Maximum): 110nC @ 10V
  • Input Capacitance (Ciss) (Maximum): 3400pF @ 25V
  • Power Dissipation (Maximum): 280W
  • Drive Voltage: 10V
  • Package: TO-247-3
  • Status: Obsolete

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