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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 250V
Id - Continuous Drain Current 790mA
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 2Ohm at 470mA, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 8.2nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 140pF at 25V
Power Dissipation (Maximum) 2W, 3.1W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package SOT-223
Manufacturer Package TO-261-4, TO-261AA
Manufacturer Pack Quantity 80
MSL Level 1 (Unlimited)
Win Source Part Number 1187725-IRFL214
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFL214 CAD Model

Description

The Vishay IRFL214 is a high-performance N-channel MOSFET transistor that is designed to offer high performance in a variety of electronic applications. With a maximum power dissipation of 2W and a drain-source breakdown voltage of 250V, this transistor is ideal for use in power management circuits, as well as other applications where high-performance switching is required. The IRFL214 is manufactured by Vishay Siliconix, a leading name in the field of electronic components, and is available in a range of packaging options to suit your needs.

  • Maximum power dissipation: 2W
  • Drain-source breakdown voltage: 250V

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