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IRFIBF30G

Part No IRFIBF30G
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET(Vdss=900V, Rds(on)=3.7ohm, Id=1.9A) | MOSFET N-CH 900V 1.9A TO220FP
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 900V
Id - Continuous Drain Current 1.9A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 3.7Ohm at 1.1A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 78nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1200pF at 25V
Power Dissipation (Maximum) 35W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220-3
Manufacturer Package TO-220-3 Full Pack, Isolated Tab
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187699-IRFIBF30G
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFIBF30G CAD Model

Description

The Vishay IRFIBF30G is an N-channel MOSFET transistor with a drain-source breakdown voltage of 900V and continuous drain current of 1.9A.

  • Type: N-channel MOSFET transistor
  • Drain-Source Breakdown Voltage: 900V
  • Continuous Drain Current: 1.9A
  • Rds On: 3.7Ohm @ 1.1A, 10V
  • Gate-Source Voltage(th): 4V @ 250μA
  • Power Dissipation: 35W
  • Gate Charge (Qg): 78nC @ 10V
  • Package: TO-220-3
  • Operating Temperature: -55°C to 150°C
  • Supply and Demand: balanced
  • Manufacturer Pack Quantity: 1,000
  • MSL Level: 1 (Unlimited)

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.5320 $60.0440
40+ $2.8979 $115.9160
62+ $2.8078 $174.0836
86+ $2.7166 $233.6276
110+ $2.6265 $288.9150
148+ $2.3550 $348.5400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,560 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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