The Vishay Siliconix 1187544-IRFBE30L is a N-channel MOSFET transistor with a drain-source breakdown voltage of 800V and a continuous drain current of 4.1A.

• Type: N-channel MOSFET transistor
• Drain-Source Breakdown Voltage: 800V
• Continuous Drain Current: 4.1A
• Maximum Gate-Source Voltage: ±20V
• Input Capacitance: 1300pF @ 25V
• Drive Voltage (Rds On Max): 10V
• Maximum Power Dissipation: 125W
• Gate-Source Voltage Threshold: 4V @ 250μA
• Gate Charge (Max Vgs): 78nC @ 10V
• Package: I2PAK and TO-262-3 Long Leads, I2Pak, TO-262AA packages
• Status: Obsolete
• Operating Temperature: -55°C to 150°C