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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 800V
Id - Continuous Drain Current 4.1A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 3Ohm at 2.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 78nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1300pF at 25V
Power Dissipation (Maximum) 125W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package I2PAK
Manufacturer Package TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187544-IRFBE30L
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFBE30L CAD Model

Description

The Vishay Siliconix 1187544-IRFBE30L is a N-channel MOSFET transistor with a drain-source breakdown voltage of 800V and a continuous drain current of 4.1A.

  • Type: N-channel MOSFET transistor
  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current: 4.1A
  • Maximum Gate-Source Voltage: ±20V
  • Input Capacitance: 1300pF @ 25V
  • Drive Voltage (Rds On Max): 10V
  • Maximum Power Dissipation: 125W
  • Gate-Source Voltage Threshold: 4V @ 250μA
  • Gate Charge (Max Vgs): 78nC @ 10V
  • Package: I2PAK and TO-262-3 Long Leads, I2Pak, TO-262AA packages
  • Status: Obsolete
  • Operating Temperature: -55°C to 150°C

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