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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 6.2A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.2Ohm at 3.7A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 42nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 1036pF at 25V
Power Dissipation (Maximum) 125W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187535-IRFBC40A
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian IRFBC40A CAD Model

Description

The Vishay Siliconix IRFBC40A is an N-channel MOSFET transistor with a Vds of 600V and an Id of 6.2A.

  • Vds: 600V
  • Id: 6.2A
  • Maximum power dissipation: 125W
  • Maximum Rds On: 1.2Ohm @ 3.7A, 10V
  • Gate source voltage(th): 4V @ 250μA
  • Gate charge (Qg): 42nC @ 10V
  • Package: TO-220AB
  • Mounting style: Through-hole
  • Operating temperature range: -55°C to 150°C
  • Popularity: Medium
  • Supply and demand status: balance
  • Applications: industrial and power management

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.4293 $57.1720
100+ $1.1728 $117.2800
150+ $1.1361 $170.4150
205+ $1.0995 $225.3975
265+ $1.0629 $281.6685
355+ $0.9529 $338.2795
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 1,696 pieces
MOQ: 40 pcs
Order Increment : 1 piece
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