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Same model may have multiple batches, images only for reference.
IRFBC40A Real Image
Same model may have multiple batches, images only for reference.

IRFBC40A

Part No IRFBC40A
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A) | MOSFET N-CH 600V 6.2A TO-220AB
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 6.2A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.2Ohm at 3.7A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 42nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 1036pF at 25V
Power Dissipation (Maximum) 125W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187535-IRFBC40A
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian IRFBC40A CAD Model

Description

The Vishay Siliconix IRFBC40A is an N-channel MOSFET transistor with a Vds of 600V and an Id of 6.2A.

  • Vds: 600V
  • Id: 6.2A
  • Maximum power dissipation: 125W
  • Maximum Rds On: 1.2Ohm @ 3.7A, 10V
  • Gate source voltage(th): 4V @ 250μA
  • Gate charge (Qg): 42nC @ 10V
  • Package: TO-220AB
  • Mounting style: Through-hole
  • Operating temperature range: -55°C to 150°C
  • Popularity: Medium
  • Supply and demand status: balance
  • Applications: industrial and power management

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Quantity Unit Price Ext. Price
40+ $1.5640 $62.5600
95+ $1.2834 $121.9230
140+ $1.2432 $174.0480
195+ $1.2032 $234.6240
250+ $1.1630 $290.7500
335+ $1.0427 $349.3045
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