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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 3.6A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 2.2Ohm at 2.2A, 10V
Gate Source Voltage(th) (Maximum) at Id 4.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 23nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 510pF at 25V
Power Dissipation (Maximum) 74W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187527-IRFBC30A
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFBC30A CAD Model

Description

The IRFBC30A is a high-power N-channel MOSFET transistor manufactured by Vishay Siliconix.

  • Applications: Power supplies, motor control, and lighting systems
  • Supply and Demand Status: Limited
  • Package: TO-220AB
  • Maximum Power Dissipation: 74W
  • Gate Charge (Qg): 23nC @ 10V
  • Input Capacitance (Ciss): 510pF @ 25V

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0432 $57.3760
135+ $0.8559 $115.5465
205+ $0.8291 $169.9655
280+ $0.8025 $224.7000
365+ $0.7757 $283.1305
485+ $0.6954 $337.2690
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 10,400 pieces
MOQ: 55 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?
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