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Same model may have multiple batches, images only for reference.
IRFBC20STRL Real Image
Same model may have multiple batches, images only for reference.

IRFBC20STRL

Part No IRFBC20STRL
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET | MOSFET N-CH 600V 2.2A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tape and Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 2.2A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 4.4Ohm at 1.3A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 18nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 350pF at 25V
Power Dissipation (Maximum) 3.1W, 50W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 800
MSL Level 1 (Unlimited)
Win Source Part Number 1187525-IRFBC20STRL
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFBC20STRL CAD Model

Description

The IRFBC20STRL is a N-channel MOSFET transistor that is designed for use in a variety of electronic circuits.

  • Maximum Drain-Source Breakdown Voltage: 600 V
  • Maximum Continuous Drain Current: 2.2 A
  • Maximum Power Dissipation: 50 W
  • On-Resistance: 4.4 Ohm @ 1.3 A and 10 Vgs
  • Package: Surface mount D2PAK
  • Compliance: RoHS compliant
  • Status: Obsolete and has limited supply and demand status

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