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IRF9Z24

Part No IRF9Z24
Manufacturer Vishay
Catalog FETs - Single
Description POWER MOSFET | MOSFET P-CH 60V 11A TO-220AB
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 11A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 280mOhm at 6.6A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 19nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 570pF at 25V
Power Dissipation (Maximum) 60W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187472-IRF9Z24
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian IRF9Z24 CAD Model

Description

The Vishay Siliconix MOSFET is a P-Channel transistor with a Vds - Drain-Source Breakdown Voltage of 60V and Id - Continuous Drain Current of 11A.

  • Manufacturer: Vishay Siliconix
  • Product Name: MOSFET
  • Transistor Polarity: P-Channel
  • Vds - Drain-Source Breakdown Voltage: 60V
  • Id - Continuous Drain Current: 11A
  • Rds On (Maximum) @ Id, Vgs: 280mOhm @ 6.6A, 10V
  • Gate Charge (Qg) (Maximum) @ Vgs: 19nC @ 10V
  • Mounting Technology: Through Hole
  • Package: TO-220AB
  • Power Dissipation (Maximum): 60W
  • Application: Industrial and power management applications
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Operating Temperature: -55°C to 175°C
  • Status: Obsolete

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