IRF610S Real Image
Same model may have multiple batches, images only for reference.

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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 3.3A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.5Ohm at 2A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 8.2nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 140pF at 25V
Power Dissipation (Maximum) 3W, 36W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187077-IRF610S
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF610S CAD Model

Description

The Vishay Siliconix MOSFET is a high-quality electronic component that is ideal for use in a range of applications.

  • Vds - Drain-Source Breakdown Voltage: 200V
  • Id - Continuous Drain Current: 3.3A
  • Rds On (Maximum) @ Id, Vgs: 1.5Ohm @ 2A, 10V
  • Gate Charge (Qg) (Maximum) @ Vgs: 8.2nC @ 10V
  • Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Power Dissipation (Maximum): 3W, 36W
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Temperature Range: -55°C to 150°C
  • Pack: 50

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8155 $53.0075
150+ $0.6691 $100.3650
235+ $0.6482 $152.3270
320+ $0.6273 $200.7360
415+ $0.6064 $251.6560
555+ $0.5437 $301.7535
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 1,626 pieces
MOQ: 65 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?
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