The UTT50N06L-TA3-T is an N-Channel enhancement mode power MOSFET manufactured by UTC (Unisonic Technologies Co., Ltd). It is designed for high-efficiency switching applications, offering low on-state resistance (RDS(on)) and fast switching speed. This MOSFET is well-suited for applications such as DC-DC converters, power inverters, and motor control circuits.

Applications:

• DC-DC Converters
• Power Inverters
• Motor Control
• Load Switching
• Power Management Systems

Features:

• Low On-State Resistance (RDS(on))
• Fast Switching Speed
• High Avalanche Energy
• Simple Drive Requirement
• Lead-Free and RoHS Compliant

Benefits:

• Improved Efficiency: The low RDS(on) minimizes power loss, resulting in higher efficiency in power conversion applications.
• Reduced Switching Losses: The fast switching speed reduces switching losses, further improving efficiency and thermal performance.
• Enhanced Reliability: The high avalanche energy capability ensures robustness and reliability in demanding applications.
• Simplified Design: The simple drive requirement simplifies circuit design and reduces the need for complex gate drive circuitry.
• Environmentally Friendly: The lead-free and RoHS compliant design meets environmental regulations.

Specifications:

The UTT50N06L-TA3-T features a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 50A. The RDS(on) is typically 9.5mΩ at VGS = 10V. The gate-source threshold voltage (VGS(th)) is typically around 2.0V. The total gate charge (Qg) is around 15nC. It is available in a TO-220 package. The operating junction temperature range is from -55°C to +175°C.