The UTM2513G-TN3-R is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Unisonic Technologies Co., Ltd. (UTC). It is designed for use in various switching and amplification applications where a P-channel MOSFET is required. This device offers low on-resistance and fast switching speeds, making it suitable for power management and load switching.

Applications

• Load Switching
• Power Management Circuits
• DC-DC Converters
• Motor Control
• Battery Management Systems

Features

• Low On-Resistance (RDS(on))
• Fast Switching Speed
• Low Gate Charge
• Simple Drive Requirement
• RoHS Compliant

Benefits

• Efficient power conversion due to low RDS(on)
• Reduced switching losses in high-frequency applications
• Minimal gate drive power requirement
• Enhanced system performance and reliability
• Environmentally friendly component

Additional Details

The UTM2513G-TN3-R is characterized by its low on-resistance, which minimizes power dissipation during conduction, leading to improved efficiency in power conversion circuits. The fast switching speed allows for efficient operation in high-frequency applications such as DC-DC converters. The device is available in a surface-mount package, facilitating automated assembly and reducing board space requirements.

This MOSFET is suitable for applications where space and efficiency are critical. Its characteristics make it ideal for use in portable devices, power adapters, and other battery-operated equipment.

Key Specifications:

• Drain-Source Voltage (VDS): -20V
• Gate-Source Voltage (VGS): ±12V
• Continuous Drain Current (ID): -2.5A
• On-Resistance (RDS(on) @ VGS=-4.5V): 90 mΩ (typical)
• Power Dissipation (PD): 0.625W