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UT90N03G-TN3-R

Part No UT90N03G-TN3-R
Manufacturer UTC
Catalog Electronic Wholesale
Description 90A, 30V N-CHANNEL(D-S) POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer UTC
Win Source Part Number 1278600-UT90N03G-TN3-R
Manufacturer Homepage www.utc-ic.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UT90N03G-TN3-R CAD Model

Description

The UT90N03G-TN3-R is an N-Channel Enhancement Mode Power MOSFET manufactured by UTC (Unisonic Technologies Co., Ltd.). This MOSFET is designed for high-efficiency switching applications, offering low on-resistance and fast switching speeds. It's suited for use in power management, DC-DC converters, and motor control circuits.

Applications:

  • DC-DC Converters: Step-up and step-down voltage regulation in power supplies.
  • Power Management: Load switching and power distribution in various electronic devices.
  • Motor Control: Driving and controlling the speed of small DC motors.
  • LED Lighting: Efficiently switching and controlling LED brightness.
  • Battery Management Systems (BMS): Switching and protection circuits in battery-powered devices.

Features:

  • N-Channel Enhancement Mode: Simple gate drive requirements.
  • Low On-Resistance (RDS(on)): Minimizes power losses and improves efficiency.
  • Fast Switching Speed: Reduces switching losses at higher frequencies.
  • Low Gate Charge (Qg): Requires less drive power from the control circuit.
  • Lead-Free Finish / RoHS Compliant: Environmentally friendly.

Benefits:

  • High Efficiency: Reduced power dissipation for cooler operation.
  • Simplified Circuit Design: Easier integration into existing circuits.
  • Improved System Performance: Enhanced switching characteristics for more stable operation.
  • Compact Size: Enables smaller and more compact designs.
  • Environmentally Compliant: Meets environmental regulations.

The UT90N03G-TN3-R is designed to minimize conduction and switching losses. The low on-resistance allows for efficient power transfer, while the fast switching speeds reduce losses during transitions. The gate charge is also optimized to reduce the power required to drive the MOSFET. The device is available in a surface-mount package, making it suitable for automated assembly. It is typically used in applications where efficiency and space are critical requirements.

The maximum ratings for voltage and current should be carefully observed to ensure reliable operation. Appropriate heat sinking may be required depending on the application and operating conditions. The datasheet provides detailed specifications and application guidelines. The UT90N03G-TN3-R offers a good balance of performance, efficiency, and cost for a wide range of power switching applications.

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