The UT4430G-S08-R is a P-channel enhancement-mode power MOSFET. It is designed with advanced trench technology to provide excellent RDS(ON), low gate charge, and body diode performance. The UT4430G-S08-R is suitable for applications requiring efficient power switching and management.

Applications

• Load Switching
• Power Management in Portable Devices
• DC-DC Converters
• Battery Management Systems

Features

• Advanced Trench Technology
• Low RDS(ON): RDS(ON) = 22 mΩ (typical) @ VGS = -10V
• Low Gate Charge
• Fast Switching Speed
• Lead-Free Finish; RoHS Compliant

Benefits

• High Efficiency: Low RDS(ON) minimizes power loss during switching, resulting in higher efficiency.
• Compact Design: Enables compact and efficient power management solutions.
• Improved Thermal Performance: Low RDS(ON) reduces heat generation, enhancing thermal performance.
• Reliable Operation: Robust design ensures reliable performance in various operating conditions.

Additional Details

Drain-Source Voltage (VDS): -30V

Gate-Source Voltage (VGS): ±20V

Continuous Drain Current (ID): -8A

Operating Temperature Range: -55°C to +150°C

Package: SOP-8

RDS(ON) Test Voltage: VGS = -10V