The UT3403G-AE3-R is a N-Channel Power MOSFET from Unisonic Technologies Co., Ltd (UTC). This MOSFET is designed for high-efficiency switching applications, offering low on-resistance and fast switching speeds. It's commonly used in power supplies, DC-DC converters, and motor control systems.

Applications

• Power Supplies
• DC-DC Converters
• Motor Control
• LED Lighting
• Battery Management Systems

Features

• Low On-Resistance (RDS(on)): Minimizes power loss and improves efficiency.
• Low Gate Charge (Qg): Reduces switching losses and improves switching speed.
• Fast Switching Speed: Enables high-frequency operation.
• Avalanche Rated: Provides robustness against voltage transients.
• Lead-Free Package: Complies with environmental regulations.
• TO-252 Package: Facilitates easy surface mount assembly.

Benefits

• High Efficiency: Low RDS(on) minimizes conduction losses, leading to energy savings.
• Improved Thermal Performance: Low RDS(on) reduces heat generation, increasing reliability.
• Fast Switching: Enables higher operating frequencies and smaller component sizes, reducing system cost.
• Robust Operation: Avalanche rating provides protection against voltage spikes and overvoltage conditions.
• Environmentally Friendly: Lead-free package complies with RoHS standards, minimizing environmental impact.
• Easy Assembly: TO-252 package simplifies surface mount assembly, reducing manufacturing costs.

Additional Details

The UT3403G-AE3-R is an N-Channel enhancement mode power MOSFET. It is designed to minimize conduction losses through its low RDS(on). It also offers a low gate charge (Qg), reducing switching losses and improving switching speed. The device is avalanche rated, providing increased robustness and reliability in demanding applications. The TO-252 package provides good thermal performance and is suitable for surface mount assembly.

Specifications:

• Drain-Source Voltage (VDS): 30V
• Gate-Source Voltage (VGS): ±20V
• Continuous Drain Current (ID): 8A
• On-Resistance (RDS(on)): 12 mΩ (at VGS = 10V)
• Total Gate Charge (Qg): 15 nC (at VGS = 10V)