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UP2003G-TN3-R

Part No UP2003G-TN3-R
Manufacturer UTC
Catalog Electronic Wholesale
Description P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Manufacturer UTC
Win Source Part Number 1277414-UP2003G-TN3-R
Manufacturer Homepage www.utc-ic.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UP2003G-TN3-R CAD Model

Description

The UP2003G-TN3-R is a P-Channel Enhancement Mode MOSFET from UTC (Unisonic Technologies Co., Ltd.). It's designed for load switching applications and low power inverters.

Applications

  • Load Switching: Used to switch power to various loads in electronic circuits.
  • Power Management: Employed in power management systems for efficient power distribution.
  • DC-DC Converters: Used in DC-DC converters for voltage regulation.
  • Motor Control: Utilized in low-power motor control circuits.
  • Portable Devices: Suitable for use in battery-powered devices due to its low on-resistance.

Features

  • P-Channel MOSFET: Offers efficient switching capability.
  • Low On-Resistance (RDS(on)): Minimizes power loss during conduction.
  • Low Gate Threshold Voltage: Allows for easy driving with low voltage logic.
  • Fast Switching Speed: Enables quick switching transitions.
  • Small Package: Available in a compact package for space-saving designs.
  • Lead-Free: Compliant with environmental standards.

Benefits

  • Efficient Power Switching: Low RDS(on) reduces power dissipation.
  • Easy to Drive: Low gate threshold voltage simplifies drive circuit design.
  • Compact Design: Small package allows for dense circuit layouts.
  • Versatile Applications: Suitable for a wide range of power management and switching applications.
  • Environmentally Friendly: Lead-free construction complies with environmental regulations.

Additional Details

The UP2003G-TN3-R is a P-Channel MOSFET, meaning that it conducts when the gate voltage is lower than the source voltage. It features a low on-resistance (RDS(on)), which minimizes power loss during conduction, leading to more efficient power switching. The low gate threshold voltage ensures that the MOSFET can be easily driven by low-voltage logic signals, simplifying the design of drive circuits. The fast switching speed enables quick transitions, making it suitable for high-frequency applications.

The UP2003G-TN3-R is commonly used in applications where efficient power switching is required, such as in power management systems, DC-DC converters, and load switching circuits. In portable devices, its low on-resistance helps to extend battery life by reducing power loss. It is also used in circuits that require fast switching speeds, such as in high-frequency DC-DC converters. The compact package of the UP2003G-TN3-R makes it suitable for use in densely populated circuit boards, where space is limited. The lead-free construction makes it compliant with environmental regulations, making it suitable for use in environmentally conscious designs. This component also sees use in battery protection circuits to prevent overcharging or discharging.

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