The UTC HE8550G-D-AE3-R is a silicon NPN Epitaxial Planar Transistor designed for amplifier applications. It's manufactured by Unisonic Technologies Co., Ltd (UTC).

Applications

• Audio Amplifiers
• Low Noise Amplifiers
• General Purpose Amplification
• Signal Processing Circuits
• Driver Stages

Features

• High Collector-Emitter Voltage (VCEO)
• Low Noise Figure
• High Transition Frequency (fT)
• Excellent Linearity
• Small Signal Amplification Capability
• RoHS Compliant

Benefits

• Improved Audio Quality due to low noise
• Extended operating range due to high voltage rating
• Enhanced circuit performance due to high transition frequency
• Accurate signal reproduction due to excellent linearity
• Suitable for space-constrained applications due to small package size
• Environmentally friendly due to RoHS compliance

Technical Specifications

The HE8550G-D-AE3-R typically features a collector-emitter voltage (VCEO) in the range of 25-40V. The collector current (IC) is around 0.5-1A. The power dissipation is typically around 0.625W. Its transition frequency (fT) is typically in the 100-200MHz range. The noise figure is very low, typically in the 1-2dB range. The specific package is usually SOT-23 or similar small outline transistor package. The specific electrical characteristics and thermal resistance details can be found in the official UTC datasheet.