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TSA20N60MR

Part No TSA20N60MR
Manufacturer Truesemi
Catalog OEM Parts (T - Z)
Sample
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ECAD Module
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Win Source Part Number 1006085-TSA20N60MR
Categories OEM Parts(T-Z)
Manufacturer Truesemi
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TSA20N60MR CAD Model

Description

The TSA20N60MR is a high-voltage N-channel MOSFET manufactured by Truesemi. It's designed for use in power switching applications requiring high efficiency and robust performance. It features a low on-resistance and fast switching characteristics.

Applications:

  • Power Factor Correction (PFC): Used in power supplies to improve power factor and reduce harmonic distortion.
  • Flyback converters: Employed in isolated power supplies for a variety of applications.
  • Half-bridge converters: Used in resonant converters and inverters.
  • LED lighting: Drives LEDs in high-power lighting systems.
  • Motor drives: Controls motors in various industrial and consumer applications.

Features:

  • 600V Drain-Source Voltage (VDS): Suitable for high-voltage applications.
  • Low On-Resistance (RDS(on)): Minimizes conduction losses and improves efficiency.
  • Fast Switching Speed: Reduces switching losses and improves efficiency.
  • Avalanche Ruggedness: Provides robust performance under transient conditions.
  • Gate Charge (Qg) Optimized: For efficient switching performance.

Benefits:

  • High Efficiency: Low on-resistance and fast switching speed contribute to high efficiency.
  • Reduced Heat Dissipation: Lower on-resistance results in less heat generation.
  • Enhanced Reliability: Avalanche ruggedness enhances reliability in demanding applications.
  • Simplified Design: Optimized gate charge simplifies drive circuitry design.
  • Compact Size: Available in a compact package for space-constrained applications.

Additional Details:

The TSA20N60MR typically features a drain current (ID) rating of approximately 20A, although this value can vary slightly depending on the operating temperature and conditions. The on-resistance (RDS(on)) is a key parameter and is typically in the range of a few hundred milliohms or less, depending on the gate-source voltage (VGS). The gate charge (Qg) is optimized to minimize switching losses. The device is available in a variety of packages, such as TO-220 or TO-252, depending on the specific part number and manufacturer's specifications. It's crucial to consult the datasheet for specific operating conditions, thermal resistance, and safe operating area (SOA) information. Proper heat sinking is often required to ensure reliable operation at high currents and voltages. The gate threshold voltage (VGS(th)) is another important parameter to consider when designing the gate drive circuitry. The TSA20N60MR is designed to operate over a wide temperature range, making it suitable for various environmental conditions. Truesemi is known for producing reliable power semiconductors.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9534 $52.4370
130+ $0.7823 $101.6990
200+ $0.7579 $151.5800
275+ $0.7334 $201.6850
355+ $0.7090 $251.6950
475+ $0.6356 $301.9100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 800 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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