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TPHR9003NL.L1Q(M

Part No TPHR9003NL.L1Q(M
Manufacturer Toshiba Semiconductor and Storage
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Manufacturer Toshiba Semiconductor and Storage
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 840949-TPHR9003NL.L1Q(M
Ultra Librarian 3D Model Ultra Librarian TPHR9003NL.L1Q(M CAD Model

Description

The TPHR9003NL.L1Q(M) is a 30V N-channel Power MOSFET from Toshiba Semiconductor and Storage, designed for high-efficiency power management applications. This MOSFET utilizes advanced trench gate technology to minimize on-resistance (R<sub>DS(on)) and gate charge (Q<sub>g), contributing to lower power losses and improved overall system efficiency. Its compact surface-mount package allows for efficient thermal management and space-saving design.

Applications:

  • DC-DC converters: Suitable for voltage regulation in various electronic devices.
  • Load switches: Used to control power delivery to different loads within a system.
  • Power management circuits: Integral part of power distribution networks in portable devices and other electronic systems.
  • Motor control: Can be used in low voltage motor control applications.

Features:

  • Low on-resistance (R<sub>DS(on)): Reduces conduction losses and improves efficiency.
  • Low gate charge (Q<sub>g): Minimizes switching losses.
  • High-speed switching: Enables efficient operation at high frequencies.
  • Logic Level Drive: Allows direct drive from microcontrollers.
  • Surface mount package: Facilitates automated assembly and compact designs.
  • AEC-Q101 qualified: Suitable for automotive applications.

Benefits:

  • Improved power efficiency: Reduces energy consumption and heat generation.
  • Extended battery life: Beneficial for portable devices.
  • Compact design: Enables smaller and lighter electronic products.
  • Enhanced system reliability: Due to robust design and automotive qualification.
  • Simplified circuit design: Logic level drive simplifies interface with control circuits.

Additional Details:

The TPHR9003NL.L1Q(M) features a maximum drain-source voltage (V<sub>DS) of 30V and a continuous drain current (I<sub>D) of up to 26A (depending on the specific conditions). It has a gate-source voltage (V<sub>GS) rating of ±20V. The device’s low R<sub>DS(on), typically around 9 mΩ at V<sub>GS = 10V, contributes significantly to reducing power dissipation. The MOSFET is supplied in a small surface-mount package, allowing for high-density circuit board assembly. It operates over a wide temperature range, making it suitable for various operating environments.

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.4942 $51.8910
220+ $0.4624 $101.7280
340+ $0.4464 $151.7760
485+ $0.4145 $201.0325
630+ $0.3986 $251.1180
785+ $0.3827 $300.4195
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 55,720 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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