The TPCP8507(TE85L,F,M) is a P-channel MOSFET manufactured by Toshiba Semiconductor and Storage. It's designed for power management applications, including load switching and DC-DC conversion. Key features include low on-resistance and low gate charge for efficient performance.

Applications

• Load switches
• DC-DC converters
• Power management in portable devices
• Battery protection circuits

Features

• P-Channel MOSFET
• Low on-resistance (RDS(ON))
• Low gate charge (Qg)
• 1.8 V drive capability
• Surface Mount Device (SMD)
• Lead-free plating

Benefits

• Improved power efficiency due to low on-resistance
• Reduced power loss and heat generation
• Simplified gate drive circuitry
• Compact size for space-constrained applications
• Environmentally friendly due to lead-free construction

Additional Details

The TPCP8507(TE85L,F,M) has a low gate charge, enabling fast switching speeds and reducing power loss during switching transitions. Its low on-resistance minimizes voltage drop and power dissipation when the MOSFET is in the ON state. This device is suitable for use in a wide range of applications including power management in smartphones, tablets, and other portable devices. The 1.8 V drive capability allows for direct logic-level control, simplifying design and reducing component count. Its small surface mount package is beneficial for high-density circuit board layouts, suitable for compact electronic devices.

Specifications:

• V<sub>DSS (Drain-Source Voltage): -30 V
• I<sub>D (Drain Current): -6 A
• R<sub>DS(on) (Drain-Source On-Resistance): 27 mΩ (V<sub>GS = -4.5 V), 44 mΩ (V<sub>GS = -2.5 V)
• P<sub>D (Power Dissipation): 2 W

The TPCP8507(TE85L,F,M) is RoHS compliant.