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Same model may have multiple batches, images only for reference.
TPCF8302 Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TPCF8302

Part No TPCF8302
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Arrays
Description MOSFET 2P-CH 20V 3A VS-8
Datasheet
TPCF8302 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Arrays
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3A
Rds On (Max) @ Id, Vgs 59 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 200μA
Gate Charge (Qg) @ Vgs 11nC @ 5V
Input Capacitance (Ciss) @ Vds 800pF @ 10V
Power - Max 330mW
Operating Temperature Range 150°C (TJ)
Mounting Style SMD/SMT
Package 8-SMD, Flat Lead
Manufacturer Device Package VS-8 (2.9x1.9)
Win Source Part Number 098763-TPCF8302
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TPCF8302 CAD Model

Description

The Toshiba Semiconductor and Storage transistor is a P-Channel (Dual) MOSFET with a maximum drain to source voltage of 20V and a continuous drain current of 3A @ 25°C.

  • Maximum Drain to Source Voltage: 20V
  • Continuous Drain Current: 3A @ 25°C
  • Maximum Rds On: 59 mOhm @ 1.5A, 4.5V
  • Gate Charge: 11nC @ 5V
  • Package: 8-SMD, flat lead package
  • Manufacturer Device Package: VS-8 (2.9x1.9)
  • Supply and Demand: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.9231 $67.3085
75+ $1.5777 $118.3275
115+ $1.5281 $175.7315
160+ $1.4796 $236.7360
205+ $1.4299 $293.1295
275+ $1.2821 $352.5775
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