The TPCA8060-H is an N-channel power MOSFET developed by Toshiba Semiconductor and Storage, designed for use in high-efficiency power management applications. It features a low drain-source on-resistance (RDS(ON)), which reduces power loss during switching operations, thereby increasing overall efficiency. This MOSFET utilizes advanced trench gate technology, which enhances its switching performance and contributes to its reliability.

Applications

• DC-DC converters
• Load switching circuits
• Power management in portable electronic devices
• Motor control applications
• LED lighting systems

Features

• Low drain-source on-resistance (RDS(ON)) for reduced power dissipation
• High-speed switching capabilities for efficient operation
• Advanced trench gate structure for improved performance
• Optimized for 4.5V gate drive
• Available in a small surface-mount package for space-saving
• Pb-free and RoHS compliant

Benefits

• Improved energy efficiency in power conversion systems
• Reduced heat generation, increasing system reliability
• Compact design for space-constrained applications
• Simplified thermal management due to low RDS(ON)
• Complies with environmental regulations

Additional Details

The TPCA8060-H typically features a maximum drain-source voltage (VDSS) of 30V and a continuous drain current (ID) of up to 11A, depending on application and thermal conditions. Its gate-source voltage (VGSS) is rated at ±20V. The low gate charge (Qg) contributes to its fast switching speed. The operating and storage temperature range is typically between -55°C and 150°C. The RDS(ON) is typically specified at 9.5 mΩ at VGS = 10V, and 15 mΩ at VGS = 4.5V. The package is usually SOP-8. These characteristics make the TPCA8060-H suitable for battery-powered devices and other applications where efficiency and size are critical. Its robust design ensures reliable operation in demanding environments.