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TLP350(D4-TP1F)

Part No TLP350(D4-TP1F)
Manufacturer Toshiba Semiconductor and Storage
Catalog OEM Parts (T - Z)
Description Photocoupler IC Output
Sample
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RoHS Compliant
Win Source Part Number 996285-TLP350(D4-TP1F)
Categories OEM Parts(T-Z)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TLP350(D4-TP1F) CAD Model

Description

The TLP350(D4-TP1F) is a high-speed, high-isolation voltage, and high-current insulated gate bipolar transistor (IGBT) gate drive optocoupler from Toshiba Semiconductor and Storage. It is designed for driving IGBTs and power MOSFETs in various industrial and power electronic applications.

Applications

  • IGBT and MOSFET gate drivers for inverters
  • AC and DC motor drives
  • Uninterruptible power supplies (UPS)
  • Switch-mode power supplies (SMPS)
  • Industrial automation equipment

Features

  • High isolation voltage (typically 5000 Vrms)
  • High output current (typically ±2.5 A)
  • Fast switching speed (typically 0.5 µs turn-on and turn-off time)
  • High common-mode transient immunity (typically ±15 kV/µs)
  • Wide operating temperature range (-40°C to +100°C)

Benefits

  • Provides electrical isolation between the control circuit and the power circuit, enhancing safety and preventing ground loops
  • Drives IGBTs and MOSFETs efficiently, enabling high-performance power conversion
  • Enables high-frequency operation, reducing the size and cost of passive components
  • Protects the control circuit from high-voltage transients and noise
  • Operates reliably in harsh industrial environments

Additional Details

The TLP350(D4-TP1F) consists of an LED optically coupled to an integrated circuit with a power output stage. It typically requires a supply voltage of 15V to 30V for the output stage. The input side is compatible with TTL and CMOS logic levels. The high common-mode transient immunity (CMTI) prevents spurious triggering of the output due to fast-changing common-mode voltages. An under-voltage lockout (UVLO) feature is often included to prevent the IGBT or MOSFET from being driven with insufficient gate voltage. The device is typically available in an 8-pin DIP or SO package. Proper layout and decoupling techniques are essential for achieving optimal performance and minimizing noise. External gate resistors are typically used to control the IGBT or MOSFET switching speed and reduce ringing. The datasheet provides detailed information on recommended operating conditions, electrical characteristics, and application circuit examples. Power dissipation considerations are also important, especially at high switching frequencies and high ambient temperatures.

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