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TK80E08NE

Part No TK80E08NE
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Single
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family FETs - Single
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 217581-TK80E08NE
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TK80E08NE CAD Model

Description

The TK80E08NE is an N-channel power MOSFET produced by Toshiba Semiconductor and Storage. This MOSFET is designed to deliver high efficiency and reliability in power switching applications. It features a low on-resistance and fast switching characteristics, making it a suitable choice for a variety of power management and motor control systems.

Applications

  • DC-DC Converters
  • AC-DC Power Supplies
  • Motor Control
  • LED Lighting
  • Battery Management Systems

Features

  • N-Channel MOSFET
  • Low Drain-Source On-Resistance (RDS(on))
  • High Drain Current (ID)
  • Fast Switching Speed
  • Surface Mount Package
  • RoHS Compliant

Benefits

  • High Efficiency: The low RDS(on) minimizes power loss and improves overall efficiency.
  • Reduced Heat Dissipation: Lower power losses result in less heat generation, simplifying thermal management.
  • Improved System Reliability: The robust design ensures stable performance in demanding conditions.
  • Compact Design: Surface mount package enables smaller and more compact designs.
  • Simplified Circuit Design: Easy gate drive requirements simplify the design process.

Additional Details

The TK80E08NE incorporates advanced trench MOSFET technology to achieve its low on-resistance and fast switching capabilities. The device's maximum voltage and current ratings are designed to meet the requirements of various power applications. It is packaged in a surface mount package, enabling efficient assembly and space utilization on printed circuit boards. The MOSFET's avalanche energy rating provides added protection against voltage transients and overloads. Furthermore, it adheres to RoHS compliance standards, ensuring environmental friendliness. The gate charge characteristics of the TK80E08NE contribute to its fast switching performance, which is crucial for minimizing switching losses in high-frequency applications. This MOSFET is designed to provide robust and efficient performance in a wide range of power electronic systems, making it an excellent choice for designers seeking reliable power switching solutions. Its combination of low on-resistance, fast switching, and robust design makes it suitable for various applications where energy efficiency and reliable operation are paramount.

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