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TK1K9A60F,S4X

Part No TK1K9A60F,S4X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 3.7A TO220SIS  /  N-Channel 600 V 3.7A (Ta) 30W (Tc) Through Hole TO-220SIS
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Series U-MOSIX
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.9Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id 4V @ 400µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 490 pF @ 300 V
Power Dissipation (Max) 30W (Tc)
Temperature Range - Operating 150°C
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack
Base Product Number TK1K9A60
MSL Level Not Applicable
ECCN EAR99
HTSUS 8541.29.0095
Other Names TK1K9A60FS4X(S,TK1K9A60F,S4X(S,TK1K9A60FS4X
Standard Package 50
Win Source Part Number 1099424-TK1K9A60F,S4X
Ultra Librarian 3D Model Ultra Librarian TK1K9A60F,S4X CAD Model

Description

The TK1K9A60F,S4X is an N-Channel MOSFET (Metal Oxide) transistor with a maximum drain to source voltage of 600V.

  • Continuous Drain Current: 3.7A @ 25°C
  • Maximum Rds On: 1.9Ohm @ 1.9A and 10V
  • Gate Charge: 14 nC @ 10V
  • Input Capacitance: 490 pF @ 300V
  • Operating Temperature: 150°C
  • Commonly used in: Electronic devices
  • Manufacturer: Toshiba Semiconductor and Storage
  • Classification: EAR99 component

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8323 $54.0995
150+ $0.6830 $102.4500
230+ $0.6616 $152.1680
315+ $0.6403 $201.6945
405+ $0.6189 $250.6545
545+ $0.5549 $302.4205
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,225 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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