The TC74HC132AF is a high-speed CMOS quad 2-input NAND Schmitt trigger fabricated with silicon gate C2MOS technology. It achieves high-speed operation similar to equivalent Schottky TTL while maintaining the low power consumption of CMOS. This device contains four independent 2-input NAND gates with Schmitt-trigger inputs. Schmitt-trigger inputs provide improved noise immunity and allow for the shaping of slowly changing input signals into clean, crisp output signals.

Applications

• Wave shaping
• Pulse sharpening
• Noise suppression
• Line receivers
• Clock oscillators

Features

• High-speed: tpd = 11 ns (typ.) at VCC = 5 V
• Low power dissipation: ICC = 1 μA (max) at Ta = 25°C
• Schmitt-trigger inputs for noise immunity
• Hysteresis voltage: 0.5 V (typ.) at VCC = 5 V
• Output drive capability: 10 LSTTL loads
• Symmetrical output impedance: |IOH| = IOL = 4 mA (min)
• Balanced propagation delays: tPLH ≈ tPHL
• Wide operating voltage range: VCC = 2 V to 6 V

Benefits

• Improved noise immunity compared to standard logic gates.
• Ability to shape noisy or slowly changing input signals into clean, digital signals.
• Fast switching speeds allow for use in high-speed circuits.
• Low power consumption extends battery life in portable applications.
• High output drive capability enables the device to drive multiple loads.
• Symmetrical output impedance ensures consistent signal integrity.
• Balanced propagation delays minimize timing skew.
• Wide operating voltage range provides flexibility in power supply design.

Additional Details

The TC74HC132AF is supplied in a SOP14 (Small Outline Package) package. The operating temperature range is -40°C to 85°C. It is pin-compatible with standard TTL logic devices. The Schmitt-trigger inputs offer hysteresis, which is the difference between the positive-going and negative-going threshold voltages. This hysteresis helps to prevent oscillations and unwanted triggering caused by noise on the input signal. The device implements the Boolean function Y = (A ⋅ B) for each of the four independent gates, followed by inversion.