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SSM6N25TU(TE85,F)

Part No SSM6N25TU(TE85,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Arrays
Sample
Rohs State rohs
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Category Discrete Semiconductor Products
Family FETs - Arrays
Win Source Part Number 193165-SSM6N25TU(TE85,F)
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSM6N25TU(TE85,F) CAD Model

Description

The SSM6N25TU(TE85,F) is a dual N-channel MOSFET from Toshiba Semiconductor and Storage, designed for efficient power management and load switching. The suffix '(TE85,F)' indicates a specific tape and reel packaging configuration ('TE85') suitable for automated assembly and that the part is lead-free ('F'), complying with RoHS environmental standards. The device is housed in a small surface-mount package to enable compact designs and uses advanced trench technology to minimize on-resistance and gate charge, thus enhancing switching performance.

Applications

  • Load Switching: Efficiently switches power to various loads in electronic circuits.
  • DC-DC Conversion: Employed in DC-DC converters for voltage regulation and power management.
  • Power Management in Portable Devices: Suitable for battery-powered devices requiring efficient power control.
  • Motor Control: Used in low-voltage motor control applications.
  • Automated Assembly: Packaging designed for high-volume manufacturing with pick-and-place machines.

Features

  • Dual N-Channel MOSFET: Incorporates two independent N-channel MOSFETs in a single package.
  • Low On-Resistance: Minimizes power loss during conduction for enhanced energy efficiency.
  • Low Gate Charge: Reduces switching losses and improves switching speed.
  • Small Surface Mount Package: Enables compact designs and efficient board assembly.
  • Trench Technology: Optimizes device performance and efficiency.
  • TE85 Packaging: Specifically designed for automated pick-and-place assembly.
  • Lead-Free (F): Compliant with RoHS environmental standards.

Benefits

  • Improved Energy Efficiency: Low on-resistance minimizes power dissipation, leading to higher efficiency.
  • Compact Design: Small package size supports the miniaturization of electronic devices.
  • Enhanced Switching Performance: Low gate charge ensures fast and efficient switching.
  • Simplified Circuit Design: The dual MOSFET configuration simplifies circuit layouts and reduces component count.
  • Reliable Operation: Toshiba's manufacturing ensures robust and dependable performance.
  • Optimized for Automated Assembly: TE85 packaging reduces assembly time and costs in high-volume production.
  • Environmentally Friendly: Lead-free construction complies with RoHS regulations.

Additional Details

The SSM6N25TU(TE85,F) is suitable for low-voltage applications due to its low gate threshold voltage. The RoHS-compliant and lead-free 'F' suffix ensures it meets environmental standards. The 'TE85' suffix denotes a specific tape and reel configuration optimized for automated assembly processes. Refer to the official Toshiba datasheet for comprehensive specifications, including drain-source voltage, gate-source voltage, drain current, and power dissipation ratings. This component is well-suited for high-volume manufacturing environments where automated assembly and adherence to environmental standards are essential.

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