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SSM6J50TU,LF

Part No SSM6J50TU,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 2.5A UF6 / P-Channel 20 V 2.5A (Ta) 500mW (Ta) Surface Mount UF6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Series U-MOSIV
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2V, 4.5V
Rds On (Max) @ Id, Vgs 64mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 200µA
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 10 V
Power Dissipation (Max) 500mW (Ta)
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Supplier Device Package UF6
Package / Case 6-SMD, Flat Leads
Base Product Number SSM6J50
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Other Names SSM6J50TULFTR,SSM6J50TULFDKR,SSM6J50TULFCT
Standard Package 3,000
Win Source Part Number 959090-SSM6J50TU,LF
Ultra Librarian 3D Model Ultra Librarian SSM6J50TU,LF CAD Model

Description

The electronic component with Id 914322 is a P-Channel MOSFET transistor manufactured by Toshiba Semiconductor and Storage.

  • Manufacturer: Toshiba Semiconductor and Storage
  • Win Source Part Number: 959090-SSM6J50TU,LF
  • Series: U-MOSIV
  • Packaging: Tape & Reel
  • Supply and Demand Status: limited
  • Drain to Source Voltage (Vdss): 20V
  • Continuous Drain Current: 2.5A (Ta)
  • Rds On (Max): 64mOhm @ 1.5A, 4.5V
  • Power Dissipation: 500mW (Ta)
  • Operating Temperature Range: up to 150°C

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