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SSM6J08FU

Part No SSM6J08FU
Manufacturer Toshiba Semiconductor and Storage
Catalog Electronic Wholesale
Description TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Sample
Rohs State rohs
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 1259568-SSM6J08FU
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM6J08FU CAD Model

Description

The SSM6J08FU is a P-Channel MOSFET manufactured by Toshiba Semiconductor and Storage. This MOSFET is designed for load switch applications and other general-purpose switching applications. It features a low on-resistance, contributing to energy efficiency and reduced power dissipation. The device comes in a small surface-mount package, suitable for space-constrained applications.

Applications:

  • Load switches: Used to control the power supply to various loads in electronic devices.
  • Power management: Used in power management circuits for efficient switching and regulation.
  • DC-DC converters: Employed in DC-DC converters as a switching element.
  • Portable devices: Ideal for battery-powered portable devices due to its low on-resistance and small size.
  • General-purpose switching: Used in various general-purpose switching applications.

Features:

  • P-Channel MOSFET: Offers versatile switching capabilities.
  • Low on-resistance (RDS(on)): Minimizes power dissipation and improves efficiency.
  • Small surface-mount package: Reduces board space requirements.
  • Low voltage operation: Suitable for low-voltage applications.
  • RoHS compliant: Meets environmental regulations, ensuring safe and eco-friendly operation.

Benefits:

  • Increased efficiency: Low on-resistance reduces power loss, improving overall system efficiency.
  • Compact design: Small package allows for high-density circuit designs.
  • Simplified design: Easy to implement in various switching applications.
  • Improved thermal performance: Low on-resistance minimizes heat generation.
  • Cost-effective: Provides excellent performance at a competitive price.

Additional Details:

The SSM6J08FU typically has a drain-source voltage (VDS) rating of -20V and a drain current (ID) rating. The on-resistance (RDS(on)) is typically very low, minimizing power dissipation. The device is available in a small surface-mount package, such as the SOT-23. The operating temperature range is typically from -40°C to +85°C, ensuring reliable operation in a wide range of environmental conditions. The low gate threshold voltage makes it suitable for low-voltage applications. The SSM6J08FU is designed for long-term reliability and performance.

The SSM6J08FU is designed for applications requiring efficient and compact switching. Its low on-resistance, small package, and robust design make it an excellent choice for modern electronic devices, especially in portable and space-constrained applications.

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