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SR160 K16

Part No SR160 K16
Manufacturer Toshiba Semiconductor and Storage
Catalog Hard To Find
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 1608+
Reference case SOD-123
Manufacturer Toshiba Semiconductor and Storage
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Win Source Part Number 716390-SR160 K16
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SR160 K16 CAD Model

Description

The SR160 K16 is a Schottky barrier diode manufactured by Toshiba Semiconductor and Storage. This diode is designed for high-speed switching applications and rectification purposes, where a low forward voltage drop and fast recovery time are crucial.

Applications

  • Switching power supplies
  • DC-DC converters
  • Freewheeling diodes in inductive circuits
  • Reverse polarity protection
  • High-frequency rectification

Features

  • Low forward voltage drop: Minimizes power loss and improves efficiency.
  • Fast switching speed: Enables efficient operation in high-frequency circuits.
  • High surge current capability: Provides robustness against transient voltage spikes.
  • Small surface mount package: Allows for compact designs and efficient board space utilization.
  • High reliability: Ensures stable and dependable performance.

Benefits

  • Improved efficiency: Low forward voltage drop reduces power dissipation, leading to higher overall system efficiency.
  • Enhanced performance in high-frequency applications: Fast switching speed minimizes switching losses and optimizes circuit performance.
  • Increased system reliability: High surge current capability protects the diode from damage due to transient events.
  • Smaller and more compact designs: Surface mount package allows for miniaturization of electronic devices.
  • Reduced heat generation: Lower power dissipation results in less heat, improving thermal management and prolonging component life.

Technical Specifications

While specific technical specifications may vary slightly depending on the exact revision and packaging, typical parameters for SR160 series Schottky diodes include:

  • Maximum Repetitive Peak Reverse Voltage (VRRM): Typically around 60V
  • Maximum Average Forward Rectified Current (IF(AV)): Typically around 1.0A
  • Maximum Peak Forward Surge Current (IFSM): Typically around 30A
  • Forward Voltage (VF): Typically around 0.45V at 1A
  • Reverse Leakage Current (IR): Typically around 0.1mA at VRRM
  • Operating Junction Temperature (Tj): Typically -40°C to +125°C

Always refer to the official Toshiba Semiconductor and Storage datasheet for the SR160 K16 for the most accurate and up-to-date specifications.

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