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CUS10I30A(TE85L,QM

Part No CUS10I30A(TE85L,QM
Manufacturer Toshiba Semiconductor and Storage
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTTKY 30V 1A US-FLAT
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Diode Type Schottky
Voltage - DC Reverse (Vr) (Maximum) 30V
Current - Average Rectified (Io) 1A
Voltage - Forward (Vf) (Maximum) at If 390mV at 700mA
Speed Fast Recovery = 200mA (Io)
Current - Reverse Leakage at Vr 60μA at 30V
Capacitance at Vr, F 50pF at 10V, 1MHz
Mounting Style SMD
Manufacturer Package SC-76, SOD-323
Supplier Device Package US-FLAT (1.25x2.5)
Operating Temperature - Junction 150°C (Maximum)
Manufacturer Pack Quantity 4,000
Win Source Part Number 752744-CUS10I30A(TE85L,QM
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian CUS10I30A(TE85L,QM CAD Model

Description

The CUS10I30A(TE85L,QM is a Schottky diode used in electronic devices, manufactured by Toshiba Semiconductor and Storage.

  • Voltage Rating: 30V
  • Average Rectified Current: 1A
  • Mounting Type: Surface Mount
  • Package / Case: US-FLAT (1.25x2.5)
  • Fast Recovery: 200mA (Io)
  • Operating Temperature: 150°C
  • Reverse Leakage Current: 60μA @ 30V
  • Capacitance: 50pF @ 10V, 1MHz

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