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RJH1CF5RDPQ-80#T2

Name: RJH1CF5RDPQ-80#T2
Brand: Renesas Electronics America
SKU: 508918
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	RJH1CF5RDPQ-80#T2
Manufacturer	Renesas Electronics America
Catalog	IGBTs - Single
Description	IGBT 1200V 50A 192.3W TO247
Datasheet	RJH1CF5RDPQ-80#T2 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Renesas Electronics America
Packaging	Tube/Rail
Status	Active
VCEO Maximum Collector-Emitter Breakdown Voltage	1200V
Maximum Current Collector	50A
Collector-emitter saturation voltage(Max)	2.4V @ 15V, 25A
Maximum Power Dissipation	192.3W
Input Type	Standard
Temperature Range - Operating	150°C (TJ)
Mounting	Through Hole
Case / Package	TO-247
Win Source Part Number	1092256-RJH1CF5RDPQ-80#T2
Popularity	Medium
Supply and Demand Status	Sufficient
Ultra Librarian 3D Model	Ultra Librarian RJH1CF5RDPQ-80#T2 CAD Model

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Description

The Renesas Electronics America RJH1CF5RDPQ-80#T2 is a through-hole IGBT transistor with a maximum collector current of 50A and maximum collector-emitter breakdown voltage of 1200V.

Maximum Power Dissipation: 192.3W
Collector-Emitter Saturation Voltage: 2.4V @ 15V and 25A
Discrete Semiconductor Product Type: IGBT Transistor
Temperature Range: Up to 150°C
Case/Package: TO-247
Packaging: Tube/Rail

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