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2SK880-GR/Y

Part No 2SK880-GR/Y
Manufacturer Toshiba Semiconductor and Storage
Catalog JFETs (Junction Field Effect)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 160607-2SK880-GR/Y
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SK880-GR/Y CAD Model

Description

2SK880-GR/Y Description

The 2SK880-GR/Y is an advanced N-channel MOSFET designed to provide stability and efficiency in power control applications. Ideal for high-speed switching and low power loss, it enhances electronic device performance.

Features and Benefits

  • High Switching Speed: Allows for quick transitions, minimizing delay and improving efficiency.
  • Low Power Consumption: Designed to reduce energy usage, benefiting eco-friendly applications.
  • Durable Architecture: Supports high voltage and temperature requirements.
  • Universal Design: Fits a wide array of electronic configurations.

Applications and Projects

  • Smart Grids
  • Electric Vehicle Systems
  • Renewable Energy Inverters
  • Photovoltaic Systems
  • Home Automation

Additional Details

Known for its remarkable efficiency and reliability, the 2SK880-GR/Y facilitates robust performance in critical power applications. Its consistent performance under load fluctuations makes it an asset for high-demand tech sectors.

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Pricing & Ordering

Quantity Unit Price Ext. Price
460+ $0.1092 $50.2320
1,120+ $0.0896 $100.3520
1,730+ $0.0868 $150.1640
2,385+ $0.0840 $200.3400
3,080+ $0.0812 $250.0960
4,125+ $0.0728 $300.3000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,365 pieces
MOQ: 460 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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