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2SK3569

Part No 2SK3569
Manufacturer Toshiba Semiconductor and Storage
Catalog JFETs (Junction Field Effect)
Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI) / Trans MOSFET N-CH Si 600V 10A 3-Pin(3+Tab) TO-220SIS
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 160152-2SK3569
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Industrial
Family Name 2SK3569
Introduction Date January 07, 2004
ECCN EAR99
Country of Origin China, Malaysia
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SK3569 CAD Model

Description

2SK3569 N-Channel Power MOSFET

The 2SK3569 excels in providing efficient power conversion solutions, tailored for systems requiring high-speed switching. Its robust construction ensures long-term reliability and efficiency.

  • Applications:
    • Power factor correction circuits
    • Electric power tools
    • Solar inverters
    • High-speed data systems
  • Features and Benefits:
    • Ultra-fast switching speeds
    • Efficient power dissipation
    • Resilient against voltage surges
    • Extended operational life
  • Additional Details:
    • Enhanced thermal conductivity
    • Designed for high-efficiency power designs
    • Optimal for energy conservation initiatives

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.5381 $51.1195
200+ $0.5035 $100.7000
310+ $0.4861 $150.6910
445+ $0.4514 $200.8730
580+ $0.4340 $251.7200
720+ $0.4167 $300.0240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 46,800 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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