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2SK2856

Part No 2SK2856
Manufacturer Toshiba Semiconductor and Storage
Catalog JFETs (Junction Field Effect)
Description N CHANNEL SINGLE GATE MODULATION DOPE TYPE (UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) / TRANS MOSFET N-CH 0.08A 4(2-2K1C)
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Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 159657-2SK2856
Popularity Medium
Supply and Demand Status Balance
Family Name 2SK2856
Introduction Date October 16, 1997
Estimated EOL Date Not Applicable
Ultra Librarian 3D Model Ultra Librarian 2SK2856 CAD Model

Description

The 2SK2856 is a high-efficiency N-channel MOSFET designed for a variety of electronic applications. This component is engineered to provide optimal performance in circuit designs where switching efficiency is crucial. The 2SK2856 offers a perfect balance between power consumption and performance, making it a reliable choice for both professionals and hobbyists.

Features and Benefits

  • Low On-Resistance: Ensures high efficiency and reduced power loss.
  • Fast Switching Speed: Ideal for applications requiring rapid response times.
  • High Drain Current Capability: Supports larger loads with ease.
  • Robust Design: Offers reliability in various environmental conditions.
  • Compact Package: Saves space in circuit designs.

Applications

  • DC-DC converters
  • Switching power supplies
  • Motor control circuits
  • Lighting control systems
  • Battery management systems

Additional Details

Manufactured using advanced silicon technologies, the 2SK2856 MOSFET combines low on-resistance with fast switching capabilities. The compact design of this MOSFET helps save real estate on circuit boards, enabling more efficient circuit layouts. Its high durability and reliability make it suitable for use in industrial applications, where consistent performance is required over extended periods.

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