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2SK2401(Q)

Part No 2SK2401(Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog Electronic Wholesale
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 1219+
Manufacturer Toshiba Semiconductor and Storage
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Win Source Part Number 751281-2SK2401(Q)
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SK2401(Q) CAD Model

Description

The 2SK2401(Q) is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Toshiba Semiconductor and Storage. It is designed for switching applications. The (Q) likely refers to a specific production lot or quality grade. This MOSFET is characterized by a low on-resistance and fast switching speed, making it well-suited for power switching applications.

Applications

  • Switching Regulators: Used as the primary or secondary switching element in DC-DC converters and switching regulators.
  • Motor Control: Employed in PWM-based motor control circuits for efficient motor driving.
  • DC-AC Inverters: Used as a switching element in DC-AC inverters for converting DC voltage to AC voltage.
  • Power Supplies: Utilized in power supply circuits for efficient power delivery.
  • LED Lighting: Used for switching and controlling LED current in lighting applications.

Features

  • N-Channel MOSFET: N-channel enhancement mode MOSFET.
  • Low On-Resistance: Minimizes power loss and heat generation during switching operations.
  • Fast Switching Speed: Enables efficient switching at high frequencies.
  • High Drain Current Capability: Designed to handle high drain currents.
  • Low Gate Charge: Reduces switching losses and improves efficiency.

Benefits

  • High Efficiency: Low on-resistance and fast switching speed contribute to high efficiency in switching applications.
  • Reduced Heat Dissipation: Low on-resistance minimizes heat generation.
  • Versatile Application: Suitable for a wide range of switching and power control applications.
  • Compact Design: Small package size enables compact circuit designs.
  • Improved System Performance: Enhances the overall performance of power electronic systems.

Specifications

The 2SK2401(Q) typically features a drain-source voltage (VDS) rating of 60V, a drain current (ID) rating of 7A, and a low on-resistance (RDS(on)) in the milliohm range. The gate threshold voltage (VGS(th)) is typically between 1V and 3V. The device is typically available in a surface mount package. It’s important to consult the official Toshiba datasheet for the 2SK2401(Q) for precise specifications, as they can vary based on manufacturing date and specific lot.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.8166 $61.2450
175+ $0.6699 $117.2325
270+ $0.6491 $175.2570
370+ $0.6283 $232.4710
480+ $0.6075 $291.6000
640+ $0.5440 $348.1600
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