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2SK2311(TE24R,Q)

Part No 2SK2311(TE24R,Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog JFETs (Junction Field Effect)
Description Trans MOSFET N-CH Si 60V 25A 3-Pin(3+Tab) TO-220FL T/R
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 159411-2SK2311(TE24R,Q)
Popularity Low
Supply and Demand Status Balance
Family Name 2SK2311
Introduction Date January 01, 1998
ECCN EAR99
Country of Origin Japan
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SK2311(TE24R,Q) CAD Model

Description

The 2SK2311(TE24R,Q) variant offers all the essential features of the 2SK2311 series with additional enhancements for particular technical requirements. This N-channel MOSFET is crafted to excel in high-frequency applications, yielding improved efficiency and operational stability.

Features and Benefits

  • Superior Frequency Performance: Enhances system performance in high-frequency applications.
  • Optimized Switching Characteristics: Further reduces on-resistance, saving energy.
  • Improved Voltage Handling: Enhanced capability to manage voltages, improving overall resilience.
  • Extended Lifecycle: Built to deliver an extended operational lifespan, reducing maintenance needs.

Applications and Projects

  • Communication Infrastructure: Provides reliable operation in telecommunication base stations and network equipment.
  • Renewable Energy Systems: Integral to solar inverters and wind turbine controllers.
  • Automotive Electronics: Facilitates advanced power management and control in automotive applications.
  • Battery Management Systems: Essential for improving efficiency in battery-operated devices.

The 2SK2311(TE24R,Q) is designed for engineers seeking high dependability and performance in electronic assemblies that demand rigorous standards and operational excellence.

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