The 2SC4527 is a silicon NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. This transistor is designed for use in low-noise amplifier applications within VHF and UHF bands. Characterized by its high gain and minimal noise figure, it's particularly suited for enhancing the sensitivity of receiver circuits.

Applications

• Low-Noise Amplifiers (LNAs)
• VHF/UHF Receiver Front-Ends
• TV Tuners
• Communication Devices
• Oscillators

Features

• Low Noise Figure
• High Gain
• High Transition Frequency (fT)
• Silicon NPN Epitaxial Planar Transistor Construction

Benefits

• Improved Signal Sensitivity in Receivers
• Minimized Interference and Noise
• Enhanced Performance in Communication Systems
• Stable Operation Across Varying Conditions

Technical Specifications

Common specifications for the 2SC4527 transistor include:

• Collector-Base Voltage (VCBO): 25 V
• Collector-Emitter Voltage (VCEO): 12 V
• Emitter-Base Voltage (VEBO): 3 V
• Collector Current (IC): 30 mA
• Collector Dissipation (PC): 200 mW
• Transition Frequency (fT): 8.5 GHz (Typical)
• Noise Figure (NF): 1.1 dB (Typical) at 1 GHz

The 2SC4527 is highly effective in environments where minimizing noise is paramount. Its architecture ensures that even weak signals are amplified efficiently, without substantial signal degradation. This makes it indispensable in sophisticated communication setups. The epitaxial planar structure is crucial for maintaining reliability and ensuring stable performance. It's frequently implemented in the initial stages of receiver systems to boost overall sensitivity and improve the signal-to-noise ratio. With its high transition frequency, it performs admirably in demanding, high-frequency scenarios. It is also designed to be compact for use in smaller, portable electronics.